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TSU5N60M N-Channel MOSFET

TSU5N60M Description

TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

TSU5N60M Features

* - 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Pa

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Datasheet Details

Part number
TSU5N60M
Manufacturer
Truesemi
File Size
289.66 KB
Datasheet
TSU5N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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