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TSP12N60M 600V N-Channel MOSFET

TSP12N60M Description

TSP12N60M / TSF12N60M TSP12N60M / TSF12N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

TSP12N60M Features

* - 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Sour

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Datasheet Details

Part number
TSP12N60M
Manufacturer
Truesemi
File Size
346.97 KB
Datasheet
TSP12N60M-Truesemi.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Truesemi
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