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CGB240B - 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

Description

The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards.

Features

  • Pout = +23dBm at 3.2 V.
  • ACPR / IP3 tested to be compliant with IEEE802.11b standard.
  • Fully compliant with Bluetooth requirements (dual-mode use).
  • Single voltage supply.
  • Wide operating voltage range 2.0 - 5.5 V.
  • Analog power control with four power steps.
  • Easy external matching concept Pin configuration: 1 & 2: 3: 4, 5, & 10: 6: 7: 8 & 9: 11 (paddle) Vc1 RFin NC Vcntrl1 Vcntro2 Vc2 GND For More Information, Please Visit www. triquin.

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Datasheet Details

Part number CGB240B
Manufacturer TriQuint Semiconductor
File Size 692.88 KB
Description 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Datasheet download datasheet CGB240B Datasheet

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Other Datasheets by TriQuint Semiconductor

Part Number Description
CGB240 2-Stage Bluetooth InGaP HBT Power Amplifier
CGB241 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

Full PDF Text Transcription

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CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth class 1 applications and thus can be used in dual-mode (Bluetooth/WLAN) applications, too. While providing an effective channel power of 22dBm, the ACPR is better than -33dB relative to the sinx/x spectral peak of an IEEE802.11b–modulated TX signal. Each CGB240B chip is individually tested for IP3, resulting in guaranteed ACPR performance.
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