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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
−50
V
10
mA
300
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.
k246 Datasheet
