k246 Silicon N-Channel Junction Type Field Effect Transistor

Toshiba

Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif.

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Datasheet Specifications

Part number: k246
Manufacturer: Toshiba ↗
File Size: 223.87 KB
Datasheet: k246_ToshibaSemiconductor.pdf
Description: Silicon N-Channel Junction Type Field Effect Transistor

Applications

* 2SK246 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1 nA (max) (VGS =
* 30 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction tem

k246 Distributors

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k246 Silicon N-Channel Junction Type Field Effect Transistor Toshiba

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