XPN19014MC - Silicon P-Channel MOSFET

Product Overview

Toshiba

Part number	XPN19014MC
Manufacturer	Toshiba
File Size	692.08 KB
Description	Silicon P-Channel MOSFET
Datasheet	XPN19014MC Datasheet
Additional preview pages of the XPN19014MC datasheet.

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ. ) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit XPN19014MC TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-10 2023-08-23 Rev.1.0 XPN19014MC 4. Absolu.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 31, 2024 |