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MOSFETs Silicon N-channel MOS (U-MOS-H)
XPH4R10ANB
1. Applications
• Automotive • Motor Drivers • Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
XPH4R10ANB
SOP Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2018-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2019-11
2020-06-24 Rev.4.0
XPH4R10ANB
4.
XPH4R10ANB Datasheet
