XPH2R106NC - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH2R106NC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-11 2020-10-21 Rev.1.0 XPH2R106NC 4. Absolute Maximu.

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Published: Apr 29, 2024 |