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TTC5460B Silicon NPN Transistor

TTC5460B Description

Bipolar Transistors Silicon NPN Triple-Diffused Type TTC5460B 1.Applications * Dynamic Focus * High-Voltage Switching * High-.

TTC5460B Features

* (1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-is

TTC5460B Applications

* Dynamic Focus
* High-Voltage Switching

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Silicon NPN Transistor Toshiba
Toshiba TTC5460B-like datasheet