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TTC016 Datasheet - Toshiba

TTC016 NPN Transistor

TTC016 Features

* (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.) 3. Packaging and Internal Circuit TTC016 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4.

TTC016 Datasheet (316.93 KB)

Preview of TTC016 PDF
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Datasheet Details

Part number:

TTC016

Manufacturer:

Toshiba ↗

File Size:

316.93 KB

Description:

Npn transistor.

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TTC016 NPN Transistor Toshiba

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