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TTC009 NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm * Low col.

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Applications

* ○ Power Switching Applications TTC009 Unit: mm
* Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)
* High-speed switching: tstg = 0.4 μs (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-em

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