TPCC8074 - Field Effect Transistor

Toshiba

Datasheet Details

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

📁 TPCC8074 Similar Datasheet

TPCC8001-H - Field Effect Transistor (Toshiba Semiconductor)
TPCC8002-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCC8003-H - Field Effect Transistor (Toshiba Semiconductor)
TPCC8005-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCC8006-H - Field Effect Transistor (Toshiba Semiconductor)
TPCC8007 - MOSFETs (Toshiba Semiconductor)
TPCC8008 - Field Effect Transistor Silicon N-Channel MOS Type (Toshiba Semiconductor)
TPCC8009 - Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Nov 11, 2013 |