TPC8229-H Silicon N-Channel MOSFET

Toshiba

Description

TPC8229-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8229-H 1.Applications * * DC-DC Converters CCFL Inverters 2..

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Datasheet Specifications

Part number: TPC8229-H
Manufacturer: Toshiba ↗
File Size: 255.74 KB
Datasheet: TPC8229-H-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source

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TPC8229-H Silicon N-Channel MOSFET Toshiba

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