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TMD5872-2 Microwave Power MMIC Amplifier

TMD5872-2 Description

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

TMD5872-2 Features

* n n High Power P1dB=34dBm(TYP. ) High Power Added Efficiency ηadd=21%(TYP. ) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP. ) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPER

TMD5872-2 Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may

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Microwave Power MMIC Amplifier Toshiba
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