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TK9J90E - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK9J90E
Manufacturer	Toshiba
File Size	225.59 KB
Description	N-Channel MOSFET
Datasheet	TK9J90E_Toshiba.pdf

TK9J90E Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.4.0 TK9J90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source vo.

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Published: Jul 11, 2013 |