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TK2R4A08QM - Silicon N-Channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge: QSW = 54 nC (typ. ) (3) Small output charge: Qoss = 210 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.88 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK2R4A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01.

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Datasheet Details

Part number TK2R4A08QM
Manufacturer Toshiba
File Size 485.63 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK2R4A08QM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK2R4A08QM 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 54 nC (typ.) (3) Small output charge: Qoss = 210 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.88 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK2R4A08QM TO-220SIS 1: Gate 2: Drain 3: Source ©2020-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-01 2023-01-20 Rev.2.0 TK2R4A08QM 4.
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