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MOSFETs Silicon N-Channel MOS (π-MOS)
TK1K0A60F
1. Applications
• Switching Power Supplies
2. Features
(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.83 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.77 mA)
3. Packaging and Internal Circuit
TK1K0A60F
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25 ) (t = 1.
TK1K0A60F Datasheet
