Datasheet4U Logo Datasheet4U.com

TK11Q65W - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (N.

📥 Download Datasheet

Datasheet Details

Part number TK11Q65W
Manufacturer Toshiba
File Size 243.73 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK11Q65W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK11Q65W N-Channel MOSFET INCHANGE
TK11031 TEMPERATURE SENSOR IC TOKO
TK11032 TEMPERATURE SENSOR IC TOKO
TK11033 TEMPERATURE SENSOR IC TOKO
TK11034 TEMPERATURE SENSOR IC TOKO

Other Datasheets by Toshiba

Part Number Description
TK110A10PL Silicon N-Channel MOSFET
TK110A65Z Silicon N-Channel MOSFET
TK110E10PL Silicon N-Channel MOSFET
TK110E65Z Silicon N-Channel MOSFET
TK110N65Z Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (DTMOS) TK11Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.1 A Drain current (pulsed) (Note 1) IDP 44.4 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 138 mJ Avalanche current IAR 2.
Published: |