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TK110Z65Z - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110Z65Z TO-247-4L(T) 1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specifi.

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Datasheet Details

Part number TK110Z65Z
Manufacturer Toshiba
File Size 483.17 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK110Z65Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK110Z65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110Z65Z TO-247-4L(T) 1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. 4.
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