TJ60S06M3L - P-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ60S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-03 1 2014-11-26 Rev.5.0 TJ60S06M3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating.

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Published: Nov 11, 2013 |