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TJ11A10M3 MOSFETs Silicon P-Channel MOS

TJ11A10M3 Description

TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ11A10M3 1.Applications * Switching Voltage Regulators 2..

TJ11A10M3 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ra

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MOSFETs Silicon P-Channel MOS Toshiba
Toshiba TJ11A10M3-like datasheet