TC59SM816CFTI Datasheet - Toshiba

TC59SM816CFTI SDRAM

TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second. These devices are controlled by commands setting. Eac.

TC59SM816CFTI Features

* PARAMETER -75 tCK Clock Cycle Time (min) 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) ICC1 Operation Current (max) (Sing

TC59SM816CFTI Datasheet (2.76 MB)