The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks.
| Part number | TC58NYG1S3HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 715.75 KB |
| Description | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| Datasheet |
 TC58NYG1S3HBAI6 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| TC58NS256DC | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM | Toshiba Semiconductor |
| TC581282AXB | 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM | Toshiba Semiconductor |
| TC58128FT | 128M-Bit CMOS NAND EPROM | Toshiba Semiconductor |
| TC58128FTI | 128M-Bit CMOS NAND EPROM | Toshiba Semiconductor |
| TC5816BDC | 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG0S3EBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
