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TC58FVM7B2AFT65 - 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY

Download the TC58FVM7B2AFT65 datasheet PDF (TC58FVM7B2 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 128-mbit (16m x 8 bits / 8m x 16 bits) cmos flash memory.

Description

The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVM7B2_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M × 8 BITS / 8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • Power supply voltage • Access Time (Random/Page) VDD = 2.3 V~3.
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