TC58BYG1S3HBAI4 Datasheet (Toshiba) - 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58BYG1S3HBAI4, 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM

The TC58BYG1S3HBAI4 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

The device has a 2112-byte static register which allows program and read data to be transferred between

TC58BYG1S3HBAI4 Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read