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TC55B464P-12 - SILICON GATE CMOS STATIC RAM

Download the TC55B464P-12 datasheet PDF. This datasheet also covers the TC55B464P-10 variant, as both devices belong to the same silicon gate cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55B464P-10-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TC55B464P-10 SILICON GATE CMOS STATIC RAM
TC55B464P 64K x 4-Bit BiCMOS Static RAM
TC55B464J 64K x 4-Bit BiCMOS Static RAM
TC55B464J-10 SILICON GATE CMOS STATIC RAM
TC55B464J-12 SILICON GATE CMOS STATIC RAM

Full PDF Text Transcription

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TOSHIBA 1l:55~64P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE). The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly. Features • Fast access time - TC55B464P/J-10 10ns (max.) - TC55B464P/J-12 12ns (max.
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