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TC51V8512AF-12 - SILICON GATE CMOS PSEUDO STATIC RAM

Description

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.

Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
  • Organization: 524,288 words x 8 bits.
  • Low voltage function: 3.0V±10%.
  • Data re.

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Datasheet Details

Part number TC51V8512AF-12
Manufacturer Toshiba
File Size 301.13 KB
Description SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet download datasheet TC51V8512AF-12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC51V8512AF features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.
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