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TC518129BFWL-10V - SILICON GATE CMOS PSEUDO STATIC RAM

Download the TC518129BFWL-10V datasheet PDF. This datasheet also covers the TC518129BPL-70V variant, as both devices belong to the same silicon gate cmos pseudo static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to a CS pin. The TC518129B-V is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC518129BPL-70V-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TC518129BFWL-10 CMOS Pseudo Static RAM
TC518129BFWL-10L CMOS Pseudo Static RAM
TC518129BFWL-70 CMOS Pseudo Static RAM
TC518129BFWL-70L CMOS Pseudo Static RAM
TC518129BFWL-70V SILICON GATE CMOS PSEUDO STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA TC5l8l29BPL/BFL/BFWL/BFIL-70V/80V/lOV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power supply of 2.7 - 5.5V. Refreshing is supported by a refresh (RFSf-i input which enables two types of refreshing - auto refresh and self refresh. The TC518129B-V features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
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