T2N7002AK Silicon N-Channel MOS Type Field-Effect Transistor

Toshiba

Description

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications * ESD protected gate .

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Datasheet Specifications

Part number: T2N7002AK
Manufacturer: Toshiba ↗
File Size: 448.54 KB
Datasheet: T2N7002AK-Toshiba.pdf
Description: Silicon N-Channel MOS Type Field-Effect Transistor

Applications

* ESD protected gate
* Low ON-resistance RDS(on) = 2.8 Ω (typ. ) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ. ) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ. ) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain
* source voltage Gate
* source voltage Drain current (Not

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T2N7002AK Silicon N-Channel MOS Type Field-Effect Transistor Toshiba

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T2N7002BK