SSM6N813R Datasheet - Toshiba

SSM6N813R, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM6N813R 1.

Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175
* MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM6N813R 1: Source 1 2: Gate 1 3: Drain 2 4: Sou

SSM6N813R-Toshiba.pdf