SSM3J372R Datasheet - Toshiba

SSM3J372R, Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J372R 1.

Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) 3. Packagi

SSM3J372R-Toshiba.pdf