S1420 - Silicon NPN Transistor

Toshiba

Key Features

. Excellent hpE Linearity : h KE (0. lmA)/hFE (2mA) =0.95(Typ. ) . Designed for Complementary Use with S1423(hFE =70~400; . Small Collector Output Capacitance: C ob =3. 5pF(Max. S1420 l Tnit in mm.

S1420 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S1420
Manufacturer	Toshiba
File Size	81.05 KB
Description	Silicon NPN Transistor
Datasheet	S1420 Datasheet

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Full PDF Text Transcription (Reference)

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . Excellent hpE Linearity : h KE (0. lmA)/hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1423(hFE =70~400; . Small Collector Output Capacitance: C ob =3. 5pF(Max. S1420 l Tnit in mm MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO v EBO PC Tstg RATING 60 60 I.NIT V 1. EMITTER 2. BASE 3. COLLECTOR 200 mA 200 mA 625 mW 150 °C -55-150 JEDEC EIAJ TOSHIBA TO—9 8 SC-43 2-5F1 Weight : 0.