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RN2305 - Silicon PNP Epitaxial Type Transistors

Download the RN2305 datasheet PDF. This datasheet also covers the RN2301 variant, as both devices belong to the same silicon pnp epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1301 to RN1306 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RN2301-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2305
Manufacturer Toshiba
File Size 1.37 MB
Description Silicon PNP Epitaxial Type Transistors
Datasheet download datasheet RN2305 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN2301 to RN2306 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2301/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1301 to RN1306 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.
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