Datasheet4U Logo Datasheet4U.com

RN2119MFV - Silicon PNP Epitaxial Type Transistors

📥 Download Datasheet

Datasheet Details

Part number RN2119MFV
Manufacturer Toshiba
File Size 193.27 KB
Description Silicon PNP Epitaxial Type Transistors
Datasheet download datasheet RN2119MFV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RN2107F Silicon PNP Transistor Toshiba Semiconductor
RN2108F Silicon PNP Transistor Toshiba Semiconductor
RN2109F Silicon PNP Transistor Toshiba Semiconductor
RN2001 Silicon PNP Transistor Toshiba Semiconductor
RN2002 Silicon NPN Epitaxial Type Transistor Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
RN2110 Silicon PNP Epitaxial Type Transistors
RN2110MFV Silicon PNP Epitaxial Type Transistors
RN2111 Silicon PNP Epitaxial Type Transistors
RN2111MFV Silicon PNP Epitaxial Type Transistors
RN2112 Silicon PNP Epitaxial Type Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  ncorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN1119MFV Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1Q1S Weight: 1.5 mg (typ.
Published: |