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RN2118MFV - Silicon PNP Epitaxial Type Transistors

Download the RN2118MFV datasheet PDF. This datasheet also covers the RN2114MFV variant, as both devices belong to the same silicon pnp epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RN2114MFV-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2118MFV
Manufacturer Toshiba
File Size 763.46 KB
Description Silicon PNP Epitaxial Type Transistors
Datasheet download datasheet RN2118MFV Datasheet

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Other Datasheets by Toshiba

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN1114MFV to RN1118MFV Equivalent Circuit and Bias Resistor Values Type No. RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.
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