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RN1116MFV - Silicon NPN Epitaxial Type Transistors

Download the RN1116MFV datasheet PDF. This datasheet also covers the RN1114MFV variant, as both devices belong to the same silicon npn epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RN1114MFV-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN1116MFV
Manufacturer Toshiba
File Size 780.68 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1116MFV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV Equivalent Circuit and Bias Resister Values Type No. RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Absolute Maximum Ratings (Ta = 25°C) VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.
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