RN1113F, RN1112F Silicon NPN Epitaxial Type Transistor

Toshiba

Description

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driv.

📥 Download Datasheet

RN1113F Datasheet Preview — This datasheet PDF includes multiple part numbers: RN1113F, RN1112F. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: RN1113F, RN1112F
Manufacturer: Toshiba ↗
File Size: 153.94 KB
Datasheet: RN1112F-Toshiba.pdf
Description: Silicon NPN Epitaxial Type Transistor
Note: This datasheet PDF includes multiple part numbers: RN1113F, RN1112F.
Please refer to the document for exact specifications by model.

Applications

* Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Colle

RN1113F Distributors

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RN1112F Silicon NPN Epitaxial Type Transistor Toshiba

Toshiba RN1113F-like datasheet