Datasheet Specifications
- Part number
- RN1112F
- Manufacturer
- Toshiba ↗
- File Size
- 153.94 KB
- Datasheet
- RN1112F-Toshiba.pdf
- Description
- Silicon NPN Epitaxial Type Transistor
Description
RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driv.
Applications
* Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage ColleRN1112F Distributors
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