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TOSHIBA GTR Module Silicon N Channel IGBT
MG90V2YS40
High Power Switching Applications Motor Control Applications
MG90V2YS40
Unit: mm
l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 1.5µs (max) (IC = 90A)
trr = 0.3µs (max) (IF = 90A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg
VIsol
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JEDEC JEITA TOSHIBA Weight: 430g (typ.
MG90V2YS40 Datasheet
