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High-Power Module Silicon Carbide N-Channel MOSFET
MG400V2YMS3
MG400V2YMS3
1. Applications
• High-Power Switching • Motor Controllers (including rail traction)
2. Features
(1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 �, built in thermistor. (3) Enhancement mode. (4) Electrodes are isolated from metal base plate.
3. Packaging and Internal Circuit
Note: P and N terminal should use one screw to fasten in each and AC terminal should use two screws to fasten. Note 1: When the thermistor is not used, pin 1 and pin 2 should be electrically connected to pin 12.
©2021-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2021-11
2023-02-24 Rev.4.0
4.
MG400V2YMS3 Datasheet
