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MG150J1BS11 - N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)

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Datasheet Details

Part number MG150J1BS11
Manufacturer Toshiba
File Size 163.28 KB
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Datasheet download datasheet MG150J1BS11 Datasheet

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TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Rating 600 ±20 150 300 450 150 −40 to 125 2500 (AC 1 min.
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