K8A50D Silicon N-Channel MOSFET

Toshiba

Description

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications * Low drain-source ON-re.

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Datasheet Specifications

Part number: K8A50D
Manufacturer: Toshiba ↗
File Size: 180.83 KB
Datasheet: K8A50D_Toshiba.pdf
Description: Silicon N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ. )
* High forward transfer admittance: |Yfs| = 4.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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K8A50D Silicon N-Channel MOSFET Toshiba

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