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TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
: IDSS = 10 µA (max) (VDS = 70 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.
K80E07NE Datasheet
