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K4A60DA TK4A60DA

K4A60DA Description

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications * * * .

K4A60DA Applications

* Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ. ) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta =

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TK4A60DA Toshiba
Toshiba K4A60DA-like datasheet