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K363 N-Channel MOSFET

K363 Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.

K363 Applications

* 2SK363 Unit: mm
* High breakdown voltage: VGDS =
* 40 V
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 30 V)
* Low RDS (ON): RDS (ON) = 20 Ω (typ. ) (IDSS = 15 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate

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N-Channel MOSFET Toshiba
Toshiba K363-like datasheet