JDH2S02SL - Schottky Barrier Diode

Toshiba

Datasheet Details

Suitable for reducing the product size due to the use of a small two-pin package supporting high-density mounting 3. Packaging and Internal Circuit 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 10 V Forward current IF 10 mA Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e. g. the.

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Published: Feb 28, 2025 |