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DF2S6P2CTC - ESD Protection Diodes

Toshiba

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Datasheet Details

Part number	DF2S6P2CTC
Manufacturer	Toshiba
File Size	353.38 KB
Description	ESD Protection Diodes
Datasheet	DF2S6P2CTC-Toshiba.pdf

DF2S6P2CTC Product details

Features

(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 18 V@IPP = 80 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.6.

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Published: Aug 9, 2019 |