TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO.
