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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5307
High Voltage Switching Applications
2SC5307
Unit: mm
• High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Ta = 25°C
(Note)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
400 400
7 50 100 25 500
1000
150 −55 to 150
Note: Mounted on a ceramic substrate (250 mm2 × 0.
C5307 Datasheet
