The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
• High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 400 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
DC Pulse
IC
50 mA
ICP 100
Base current
IB 25 mA
Collector power dissipation
PC
900 mW
JEDEC
TO-92MOD
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.
C5122 Datasheet
