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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5111
2SC5111
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IB IC PC Tj Tstg
20 10 3 30 60 100 125 −55 to 125
V V V mA mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.
C5111 Datasheet
